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| APTDF500U20G Single diode Power Module Application * * * * * * * Anti-Parallel diode - Switchmode Power Supply - Inverters Snubber diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Electric vehicles VCES = 200V IC = 500A @ Tc = 80C Features * * * * * * Benefits * * * * * Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics Very low stray inductance High blocking voltage High current Low leakage current A1 A S P MTM A2 A S P MTM K1 K2 Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25C Tc = 80C Tj = 25C Max ratings 200 500 500 850 5000 Unit V RMS Forward Current Non-Repetitive Forward Surge Current A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF500U20G - Rev 1 June, 2006 APTDF500U20G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT LS Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Series Inductance Test Conditions IF = 500A IF = 1000A IF = 500A Tj = 150C Tj = 25C VR = 200V Tj = 150C VR = 200V Lead to Lead 5mm from Base Min Typ 1.25 Max 1.1 0.95 2500 5000 Unit V A pF 1000 30 40 nH Dynamic Characteristics Symbol Characteristic trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 dIM/dt Forward Recovery Time Reverse Recovery Current Reverse Recovery Charge Forward Recovery Voltage Rate of Fall of Recovery Current Reverse Recovery Time Test Conditions IF=1A,VR=30V di/dt = 15A/s IF = 500A VR = 100V di/dt=800A/s Tj = 25C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C IF = 500A VR = 100V di/dt=800A/s Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Tj = 25C Tj = 100C Min Typ 70 70 150 250 250 Max Unit ns ns 50 120 A C V A/s 4.9 22 15 15 1200 1800 Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Wt Mounting torque Package Weight To heatsink For terminals M5 M6 Min 2500 -40 -40 -40 2.5 3 Typ Max 0.08 Unit C/W V g www.microsemi.com 2-3 APTDF500U20G - Rev 1 June, 2006 150 125 100 3.5 4 250 C N.m APTDF500U20G LP4 Package outline (dimensions in mm) A S P MTM Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF500U20G - Rev 1 June, 2006 A S P MTM |
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